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InP材料的某些优良特性使InP毫米波体效应器件对于GaAs器件具有明显的竞争潜力.由于InP材料具有峰谷比高、谷间散射时间短、饱和漂移速度大、电子扩散系数与迁移率之比较低、热导率较高等优点,因而有利于提高器件的工作频率、效率以及降低噪声.我们在GaAs体效应管的研制基础上,采用本所的InP单晶及外延材料,对毫米波InP体效应管进行了初步实验研究.
InP materials have some excellent properties that make InP millimeter-wave effect devices have obvious competitive potential for GaAs devices.Because InP materials have high peak to valley ratio, short in-valley scattering time, large saturation drift velocity, electron diffusion coefficient and mobility Relatively low thermal conductivity and other advantages, which will help to improve the working frequency of the device, the efficiency and reduce the noise.We GaAs body effect transistor in the development, based on the InP single crystal and epitaxial materials, the millimeter wave InP Body effect tube for a preliminary experimental study.