本文论述SiO_2薄膜的低温等离子体改性研究。测试了经改性的介质膜的电学性能,利用AES和IR等表面分析技术分析了膜的组分和结构。在此基础上确定了影响膜性质的工艺因素,获得了性能优良的介质膜,并成功地开发了用于制备SOI材料的等离子体表面处理技术。 This article discusses the low temperature plasma modification of SiO 2 thin films. The electrical properties of the modified dielectric films were tested and the composition and structure of the films were analyzed by surface analysis techniques such as AES and IR. On this basis, the technological factors that affect the properties of the film were determined, the dielectric film with excellent performance was obtained, and the plasma surface treatment technology for preparing the SOI material was successfully developed.