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高剂量氦离子注入和退火在硅中形成了氦微气泡（ｂｕｂｂｌｅ）和微孔（ｃａｖｉｔｙ）．我们用剖面透射电镜显示了微孔的形貌．二次离子质谱和卢瑟福背散射测试表明氦注入引起的微孔层对铜和金有明显的吸杂作用，且在１２００℃高温下吸杂仍具有稳定性．我们还与带氧沉淀的样品作了吸杂效果的比较．
High-dose helium ion implantation and annealing form helium microbubbles and cavities in silicon. We used a cross-sectional TEM to show the morphology of the micropores. Secondary ion mass spectrometry and Rutherford backscattering tests show that the microporous layer induced by helium injection has a significant gettering effect on copper and gold, and the gettering at 1200 ℃ is still stable. We also compared the effect of gettering with oxygen-precipitated samples.