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用非共晶组份Au/Ge合金做n型GaAs欧姆接触.系统测定了不同Au,Ge厚度做欧姆接触的比接触电阻值.以150A|°Ge/2000—2500A|°Au的配比,在400℃,10min(实际是3min)下合金化,其比接触电阻值能与文献报道的数据相比较,且表面很平.这有利于栅长≤1μm场效应管的光刻,且能改进器件性能与成品率.用作在高阻衬底上以扩散法制备n沟道场效应管的欧姆接触,改进的器件性能在栅长是1.2μm,栅宽150μm时,跨导8m达29m3.另一个样品在栅长1.3μm,栅宽300μm时,fmax=21GHz,在4GHz下,噪声系数N_F≤1.5dB,相关增益Gα为11dB.
The n-type GaAs ohmic contact was made with the non-eutectic Au / Ge alloy.The specific ohmic contact resistance values of the different Au and Ge thicknesses were measured by the system.With the ratio of 150A | ° Ge / 2000-2500A | Au, After alloying at 400 ℃ for 10min (actually 3min), the specific resistance can be compared with the data reported in the literature, and the surface is very flat.This is conducive to the lithography of the gate length ≤1μm FET, and can improve Device performance and yield. Used as a ohmic contact for n-channel FETs fabricated by diffusion on a high resistance substrate. Improved device performance with a gate length of 1.2μm and a gate width of 150μm translates to 8m for 29m3. A sample with a gate length of 1.3 μm and a gate width of 300 μm has a fmax = 21 GHz. At 4 GHz, the noise figure N_F ≤ 1.5 dB and the correlation gain Gα is 11 dB.