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由J.M.Woodau改进的一种方法(美国专利3,322,501号。1967年5月30日。已转让给通用Businous机械公司),包括采用氧化亚镓(Ga_2O)气氛的压力来抑制镓和熔凝反应容器之间所不希望的污染反应。所制备晶体的纯度和类型受到下列因素的影响:即所采用的压力以及基于这里所论述的事实,在本方法中所采用的反应的产物都是非污染性的。由于反应产物都是非污染性的,因而与以前的工艺方法比较就更容易制得高纯度的砷化镓单晶。这种方法的工艺利用下列反应
One method improved by JMWoodau (U.S. Patent 3,322,501, May 30, 1967. Transferred to GM Businous Machinery Corporation) includes the use of a pressure of a Ga 2 O atmosphere to suppress gallium and the reactor vessel from melting Between the unwanted pollution reaction. The purity and type of crystals prepared are influenced by the pressures employed and the products of the reactions employed in the process are non-contaminating based on the facts discussed herein. Since the reaction products are non-polluting, it is easier to produce high-purity gallium arsenide single crystal than the previous process. The process of this method utilizes the following reaction