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对含Ｎ薄栅ＭＯＳ电容进行了６０Ｃｏγ辐照和１００℃恒温退火行为的分析研究，结果表明：栅介质中Ｎ的引入，能明显抑制辐射感生Ｓｉ／ＳｉＯ２界面态的产生，减少初始固定正电荷和界面态，减小辐照后界面陷阱的退火速率．用一定模型解释了实验结果．
The results show that the introduction of N into the gate dielectric can significantly inhibit the generation of the radiation-induced Si / SiO2 interfacial states and reduce the initial positive fixed positive Charge and interface states reduce the annealing rate of interface traps after irradiation. The experimental results are explained by a certain model.