随着科学的飞速发展，出于提高生产率、降低成本的目的，器件厂家随着生产规模的扩大逐步要求增大硅片直径。硅单晶直径增大后，大熔硅体......

在大直径CZSi单晶生长时 ,热场与氩气流场通过影响晶体与熔体的温度分布来影响硅单晶中缺陷的形成 .通过变单晶炉的普通热系统为以......

The pulling rate in czochralski silicon (CZSi) growth is important for reducing the cost of solar cell.In this paper, do......

During large diameter Czochralski silicon growth, heat zone and argon flow influence the formation of defects in silicon......