日本超LS1技术研究组合共同研究所的直到0.25微米的线条与间隔图形,被选为划时代的剥离技术。为更进一步将此技术用于布线,所以也同时研制了金属化工艺,这些都在十二月举行的电子通信学会半导体与晶体管研究会上发表了。 剥离技术作为高精度加工方法是超LS1等的亚微米器件所不可缺少的技术。用以往的加工方法,由于部分剥离不成功 Japan's LS1 Technology Research Institute co-Institute of the 0.25 micron lines and spaces until the graph was selected as the epoch-making stripping technology. To further this technology for wiring, so also the development of metallization process, which are held in December at the Institute of Electronics and semiconductor semiconductor and transistor research conference was published. Peeling technology is an indispensable technology for sub-micron devices such as LS1, as a high-precision processing method. With the past processing methods, due to the partial stripping unsuccessful