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本文提出了一种新型低热阻高速插脚阵列式(PGA)封装结构,并证实了其实用性。为获得低热阻,把硅芯片焊到金属化的AlN陶瓷基板上,使它直接与空气冷却的散热片连到一起(腔体向下结构)。在基板上涂覆低介电常数的聚酰亚胺层之间排布信号线,可使传播延迟减小。当空气速度为2m/s时,从硅芯片到环境空气的热阻为2.7℃/W(散热片高20mm)。最长信号线的自感为20nH,最长信号线之间的电容是1.7pF。在-55～150℃,热循环试验24个周期后,氦漏速约为10~(-9)atm·cc/s。
This paper presents a new low thermal resistance high-speed pin array (PGA) package structure, and confirmed its practicality. For low thermal resistance, the silicon die is soldered to a metallized AlN ceramic substrate so that it is directly attached to the air-cooled heat sink (cavity down structure). The propagation delay can be reduced by arranging the signal lines between the polyimide layers coated with the low dielectric constant on the substrate. When the air velocity is 2m / s, the thermal resistance from the silicon chip to the ambient air is 2.7 ° C / W (the height of the heat sink is 20 mm). The longest signal line has a self inductance of 20nH and the longest signal line has a capacitance of 1.7pF. The helium leak rate was about 10 ~ (-9) atm · cc / s at -55 ~ 150 ℃ after 24 cycles of thermal cycling test.