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以ZnO—B_2O_3—SiO_2为主体的锌系玻璃钝化膜具有明显的负电荷效应。MGS结构界面电荷N_(FB)受玻璃微晶化气氛的影响,氮气下形成的N_(FB)为-7.9×10~(10)(厘米~(-2)),而氧气下得到-4.3×10~(11)(厘米~(-2)),比前者约高出5倍。测量发现,部分样品出现异常C-V特性,最小电容处曲线上翘,表现出n型硅表面的永久性反型现象。这一现象以及正的平带电压都反映了玻璃膜内负电荷的存在。 B-T处理后,C-V曲线的平移量△V_(FB)是应力电压的饱和函数。较高温度的B-T处理,能使玻璃“锁定”可动离子,再在零偏置的温度处理后,△V_(FB)等于零.
Zinc-based glass passivation films mainly composed of ZnO-B 2 O 3 -SiO 2 have obvious negative charge effect. The charge N_ (FB) at the interface of MGS structure is affected by the glass microcrystallization atmosphere, and the N_ (FB) is -7.9 × 10 ~ (10) cm -2 under nitrogen atmosphere and -4.3 × 10 ~ (11) (cm ~ (-2)), about 5 times higher than the former. Measurement showed that some samples showed abnormal C-V characteristics, the curve of the minimum capacitance upturned, showing n-type silicon surface permanent inversion phenomenon. This phenomenon and the positive flat-band voltage both reflect the presence of negative charges in the glass film. After B-T processing, the amount of translation ΔV_ (FB) of the C-V curve is a function of the saturation voltage of the stress. The higher temperature B-T treatment allows the glass to “lock” the movable ions and then ΔV_ (FB) equals zero after a zero offset temperature treatment.