SCHOTTKY相关论文
成功研制出蓝宝石衬底的槽栅增强型AlGaN/GaN HEMT.栅长1.2μm,源漏间距4μm,槽深15nm的器件在3V栅压下饱和电流达到332mA/mm,最大......
The post-silicide of dopant segregation process for adjusting NiSi/n-Si SBH(Schottky barrier height)is described.Adoptin......
By means of analyzing theⅠ-Ⅴcharacteristic curve of NiSi/n-Si Schottkyjunction diodes(NiSi/n-Si SJDs), abstracting the......
深入研究了两种增强型AlGaN/GaN高电子迁移率晶体管(HEMT)高温退火前后的直流特性变化.槽栅增强型AlGaN/GaN HEMT在500℃N2中退火5......
This paper investigates the current-voltage (I-V) characteristics of Al/Ti/4H-SiC Schottky barrier diodes (SBDs) in the ......
The epitaxial material, device structure, and corresponding equivalent large signal circuit model of GaAs planar Schottk......
该文报道具有最小比导通电阻的~1.7 k V 4H-SiC结势垒肖特基二极管。首先通过数值仿真对结势垒肖特基(junction barrier Schottky,......
Interface reaction (IR) is a frequently observed phenomenon in the study of advanced thin film materials. It is very im......
The dependence of sintering temperature on Schottky barrier and bulk electron traps of ZnO varistors
In order to investigate the influence of sintering temperature on the Schottky barrier and bulk electron traps of ZnO va......
本文首次报道了高掺杂沟道的GaAs MIS SB FET.在S.I.GaAs衬底上用离子注入Si,同时形成高浓度、超薄的有源层和欧姆接触区,载流子峰......
InP及其三元,四元化合物材料,在微波器件和光电器件中的应用日益广泛,但是,目前尚缺乏一个简便的方法同时测量生长材料的载流子浓......
本文对功率电路中传统使用的P-i-n整流器及肖特基势垒整流器、同步整流器、结势垒控制的肖特基整流器、砷化锭肖特基整流器等新型......
通过高温高压电化学测试,获得不同实验温度下13Cr不锈钢的循环伏安曲线、交流阻抗谱和Mott-Schottky曲线,结合ZSIMPWIN软件和扫描......
通过静态浸泡腐蚀实验以及极化曲线测试、电化学阻抗谱测试、Mott-Schottky曲线等电化学测试技术,结合扫描电子显微镜技术研究了马......
This paper reports the realization of planar Schottky diodes based on nanorod ZnO thin film.The nanorod ZnO thin film wa......
研究和制作了一种新型Au/n-ZnO/p-Si结构的肖特基发射极、异质结集电极紫外增强双极型光电三极管.分析了器件原理,测试了I-V特性、......
